Title :
High-speed modulation of strain-compensated InGaAs-GaAsP-InGaP multiple-quantum-well lasers
Author :
Han, H. ; Freeman, P.N. ; Hobson, W.S. ; Dutta, N.K. ; Lopata, J. ; Wynn, J.D. ; Chu, S.N.G.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Small signal direct modulation characteristics of InGaAs-GaAsP-InGaP multiple quantum well ridge waveguide lasers (4.5×220 μm2) are described. The compressive strain of four InGaAs quantum wells is compensated by the tensile strain of GaAsP barriers. The lasers have a threshold current of 8 mA and an internal differential quantum efficiency of 80%. A 3-dB bandwidth of 25 GHz is obtained at 54 mA. It is found that the strain-compensated lasers have a K factor as low as 0.15 ns, implying a maximum 3-dB bandwidth of 59 GHz.
Keywords :
III-V semiconductors; compensation; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; ridge waveguides; waveguide lasers; 0.15 ns; 220 mum; 25 GHz; 4.5 mum; 54 mA; 59 GHz; 8 mA; 80 percent; GaAsP barriers; InGaAs quantum wells; InGaAs-GaAsP-InGaP; InGaAs-GaAsP-InGaP multiple quantum well ridge waveguide lasers; K factor; compressive strain; dB bandwidth; high-speed modulation; internal differential quantum efficiency; small signal direct modulation characteristics; strain-compensated InGaAs-GaAsP-InGaP multiple-quantum-well lasers; strain-compensated lasers; tensile strain; threshold current; Bandwidth; Capacitive sensors; Damping; Optical waveguides; Photonic band gap; Quantum well devices; Quantum well lasers; Semiconductor lasers; Tensile strain; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
