Title :
Ultralow threshold strained InGaAs-GaAs quantum well lasers by impurity-induced disordering
Author :
Zou, W.X. ; Merz, J.L. ; Fu, R.J. ; Hong, Choong
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
7/4/1991 12:00:00 AM
Abstract :
Stripe-geometry strained InGaAs-GaAs quantum well lasers were fabricated by impurity induced disordering. Threshold currents as low as 2.2 mA at room temperature continuous operation (RT CW) were obtained for uncoated lasers having 1.2 mu m wide, 215 mu m long active stripes. The authors believe that this ultralow threshold is mainly due to the very small active stripe width and the excellent electrical confinement of the laser.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1.2 micron; 2.2 mA; 215 micron; electrical confinement; impurity induced disordering; room temperature continuous operation; semiconductors; small active stripe width; strained InGaAs-GaAs quantum well lasers; stripe geometry lasers; threshold current; ultralow threshold; uncoated lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910778
