Ultra low frequency CMOS ring oscillator design

Author

Mahato, Ajoy Kumar

Author_Institution

Dept. of Electron. & Commun., Nat. Inst. of Technol., Ravangla, India

fYear

2014

fDate

6-8 March 2014

Firstpage

1

Lastpage

5

Abstract

In this paper, the concept of CMOS thyristor has been used to implement low frequency ring oscillator using 2.5 volt power-supply and 1pF load capacitance using 250nm technology. By using the conventional CMOS thyristor structure the frequency of the output sinusoidal waveform is of the order of KHz, which has been further improved in proposed CMOS thyristor based ring oscillator. The frequency of the output sinusoidal waveform in the proposed structures is of the order of few Hz. In addition to this static power dissipation of the CMOS ring oscillator has been further improved in the proposed CMOS thyristor based ring oscillator.

Keywords

CMOS analogue integrated circuits; oscillators; thyristors; CMOS thyristor structure; capacitance 1 pF; output sinusoidal waveform; size 250 nm; static power dissipation; ultra low frequency ring oscillator design; voltage 2.5 V; CMOS integrated circuits; CMOS technology; Inverters; Power dissipation; Ring oscillators; Thyristors; Transistors; CMOS Thyristor; Low Static Power Consumption; Ultra Low Freqency;

fLanguage

English

Publisher

ieee

Conference_Titel

Engineering and Computational Sciences (RAECS), 2014 Recent Advances in

Conference_Location

Chandigarh

Print_ISBN

978-1-4799-2290-1

Type

conf

DOI

10.1109/RAECS.2014.6799627

Filename

6799627