DocumentCode :
128315
Title :
Ultra low frequency CMOS ring oscillator design
Author :
Mahato, Ajoy Kumar
Author_Institution :
Dept. of Electron. & Commun., Nat. Inst. of Technol., Ravangla, India
fYear :
2014
fDate :
6-8 March 2014
Firstpage :
1
Lastpage :
5
Abstract :
In this paper, the concept of CMOS thyristor has been used to implement low frequency ring oscillator using 2.5 volt power-supply and 1pF load capacitance using 250nm technology. By using the conventional CMOS thyristor structure the frequency of the output sinusoidal waveform is of the order of KHz, which has been further improved in proposed CMOS thyristor based ring oscillator. The frequency of the output sinusoidal waveform in the proposed structures is of the order of few Hz. In addition to this static power dissipation of the CMOS ring oscillator has been further improved in the proposed CMOS thyristor based ring oscillator.
Keywords :
CMOS analogue integrated circuits; oscillators; thyristors; CMOS thyristor structure; capacitance 1 pF; output sinusoidal waveform; size 250 nm; static power dissipation; ultra low frequency ring oscillator design; voltage 2.5 V; CMOS integrated circuits; CMOS technology; Inverters; Power dissipation; Ring oscillators; Thyristors; Transistors; CMOS Thyristor; Low Static Power Consumption; Ultra Low Freqency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Engineering and Computational Sciences (RAECS), 2014 Recent Advances in
Conference_Location :
Chandigarh
Print_ISBN :
978-1-4799-2290-1
Type :
conf
DOI :
10.1109/RAECS.2014.6799627
Filename :
6799627
Link To Document :
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