Title :
Influence of Ion Bombardment on Electron Emission of MgO Surface in AC Plasma Display Panel
Author :
Park, Choon Sang ; Tae, Heung Sik ; Jung, Eun Young ; Seo, Jeong Hyun ; Shin, Bhum Jae
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
The influence of ion bombardment during a sustain discharge on the electron emission of the MgO surface and related driving characteristics of an ac plasma display panel were examined using the cathodoluminescence technique and SIMS analysis. The experimental results showed that severe ion bombardment predominantly sputtered Mg species from the MgO surface, thereby lowering the intensity of the F+ center peak to 3.2 eV due to the elimination of the oxygen vacancy and finally increasing the formative address delay time (Tf) due to an aggravated electron emission capability. Meanwhile, severe ion bombardment also destroyed the shallow trap level, thereby lowering the intensity of the shallow peak to 1.85 eV and eventually increasing the statistical address delay time (Ts) due to a poor electron emission capability from the shallow level. Finally, the aggravated electron emission capability from the shallow level resulted in a reduced wall voltage variation during the address period.
Keywords :
cathodoluminescence; electron emission; magnesium compounds; plasma displays; AC plasma display panel; MgO; SIMS analysis; cathodoluminescence technique; electron emission; electron volt energy 1.85 eV; electron volt energy 3.2 eV; ion bombardment; wall voltage variation; Added delay; Delay effects; Discharges; Electron emission; Electron traps; Helium; Partial discharges; Phosphors; Plasma displays; Research and development; Surface discharges; Surface morphology; Surface resistance; Surface roughness; Voltage; Cathodoluminescence (CL); electron emission; formative address delay time; ion bombardment; statistical address delay time; wall voltage variation;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2010.2053560