DocumentCode :
1283245
Title :
Zero-net-strain multiquantum well lasers
Author :
Perrin, S.D. ; Cooper, Diana Marina
Volume :
27
Issue :
14
fYear :
1991
fDate :
7/4/1991 12:00:00 AM
Firstpage :
1268
Lastpage :
1270
Abstract :
A zero-net-strain MQW wafer has been grown. The structure consisted of 16 In0.67Ga0.33As wells with 15 InGaAsP ( lambda g=1.3 mu m) negatively mismatched barriers. Short buried heterostructure lasers exhibited low CW threshold currents and high output powers. RIN measurements imply a maximum 3 dB modulation bandwidth of 38 GHz.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 1.3 micron; 3 dB modulation bandwidth; 38 GHz; In 0.67Ga 0.33As-InGaAsP; MQW wafer; RIN measurements; buried heterostructure lasers; high output powers; low CW threshold currents; multiquantum well lasers; semiconductor lasers; short BH lasers; zero-net-strain;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910795
Filename :
81181
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1283245
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