Title :
Impact ionization rates in
Author :
Watanabe, I. ; Torikai, T. ; Makita, K. ; Fukushima, K. ; Uji, Toshio
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
Impact ionization rates for electrons and holes in
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; impact ionisation; indium compounds; p-i-n diodes; Al/sub 0.48/In/sub 0.52/As; AlInAs-GaInAs; electric field range; electron-initiated configuration; impact ionization-rate ratio; metalorganic vapor phase epitaxy; p/sup +/-i-n diodes; photomultiplication measurements; superlattice avalanche photodiodes; Avalanche breakdown; Breakdown voltage; Charge carrier processes; Dark current; Diodes; Electric variables measurement; Impact ionization; Laser beams; Nickel alloys; Photoconductivity;
Journal_Title :
Electron Device Letters, IEEE
