Title :
Frequency response and differential Gain in strained and unstrained InGaAs/InGaAsP quantum well lasers
Author :
Perrin, S.D. ; Cooper, Diana Marina
fDate :
7/4/1991 12:00:00 AM
Abstract :
A systematic investigation is presented into the frequency response and differential gain in both strained and unstrained InGaAs/InGaAsP 1.5 mu m quantum well lasers. Both the differential gain and damping in strained devices were found to be similar in magnitude to comparable unstrained devices. In addition, the differential gain was found to increase and the damping to decrease with increasing numbers of quantum wells.
Keywords :
III-V semiconductors; frequency response; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 1.5 micron; MQW; damping; differential Gain; frequency response; quantum well lasers; semiconductor lasers; strained devices; unstrained devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910801
