Title :
The fabrication of a broad-spectrum light-emitting diode using high-energy ion implantation
Author :
Poole, P.J. ; Davies, M. ; Dion, M. ; Feng, Y. ; Charbonneau, S. ; Goldberg, R.D. ; Mitchell, I.V.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
High-energy ion implantation is used to spatially modify the bandgap of a 1.5-μm laser structure to fabricate a broad spectrum light emitting diode (LED). An increase in the emission full width half maximum (FWHM) from 28 nm to 90 nm is observed. An absorbing section at one end of the device is used to suppress lasing operation and remove Fabry-Perot noise.
Keywords :
ion implantation; optical fabrication; semiconductor quantum wells; semiconductor technology; superluminescent diodes; /spl mu/m laser structure bandgap; 1.5 mum; Fabry-Perot noise; LED; absorbing section; broad spectrum light emitting diode; broad-spectrum light-emitting diode; emission full width half maximum; high-energy ion implantation; lasing operation suppression; superluminescent diode fabrication; Annealing; Indium phosphide; Ion implantation; Light emitting diodes; Optical device fabrication; Optical fiber cables; Photonic band gap; Superluminescent diodes; Surface emitting lasers; Thickness control;
Journal_Title :
Photonics Technology Letters, IEEE
