DocumentCode :
1283329
Title :
Enlarged Photodetection Using 
Nanowire Arrays
Author :
Mondal, Aniruddha ; Singh, Naorem Khelchand ; Chinnamuthu, P. ; Dhar, Jay Chandra ; Bhattacharyya, Anirban ; Choudhury, Sushabhan
Author_Institution :
Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Agartala, India
Volume :
24
Issue :
22
fYear :
2012
Firstpage :
2020
Lastpage :
2023
Abstract :
We have synthesized perpendicular SiOx nanowire (NW) arrays on Si substrates and investigated them using scanning electron microscopy. Transmission electron microscopy and energy-dispersive spectroscopy have been used to investigate the single NW structure. A near-infrared emission at 700 nm is observed. In/SiOx NW and In/SiOx thin film (TF) contacts exhibit Schottky behavior. The SiOx NW-based devices show six-fold improvements in photodetection efficiency in white-light illumination, compared to SiOx TF-based devices under reverse bias condition.
Keywords :
Schottky barriers; X-ray chemical analysis; indium; nanowires; optical arrays; photodetectors; photoluminescence; scanning electron microscopy; silicon compounds; thin films; transmission electron microscopy; In-SiOx; Schottky behavior; Si; TF-based devices; energy-dispersive spectroscopy; nanowire arrays; near-infrared emission; photodetection; reverse bias condition; scanning electron microscopy; thin film contacts; transmission electron microscopy; white-light illumination; Absorption; Lighting; Scanning electron microscopy; Schottky barriers; Sensitivity; Silicon; Substrates; Glancing angle deposition; microscopy; nanowires; optical properties; photodetector;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2012.2218232
Filename :
6298935
Link To Document :
