• DocumentCode
    1283329
  • Title

    Enlarged Photodetection Using {\\rm SiO}_{x} Nanowire Arrays

  • Author

    Mondal, Aniruddha ; Singh, Naorem Khelchand ; Chinnamuthu, P. ; Dhar, Jay Chandra ; Bhattacharyya, Anirban ; Choudhury, Sushabhan

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Agartala, India
  • Volume
    24
  • Issue
    22
  • fYear
    2012
  • Firstpage
    2020
  • Lastpage
    2023
  • Abstract
    We have synthesized perpendicular SiOx nanowire (NW) arrays on Si substrates and investigated them using scanning electron microscopy. Transmission electron microscopy and energy-dispersive spectroscopy have been used to investigate the single NW structure. A near-infrared emission at 700 nm is observed. In/SiOx NW and In/SiOx thin film (TF) contacts exhibit Schottky behavior. The SiOx NW-based devices show six-fold improvements in photodetection efficiency in white-light illumination, compared to SiOx TF-based devices under reverse bias condition.
  • Keywords
    Schottky barriers; X-ray chemical analysis; indium; nanowires; optical arrays; photodetectors; photoluminescence; scanning electron microscopy; silicon compounds; thin films; transmission electron microscopy; In-SiOx; Schottky behavior; Si; TF-based devices; energy-dispersive spectroscopy; nanowire arrays; near-infrared emission; photodetection; reverse bias condition; scanning electron microscopy; thin film contacts; transmission electron microscopy; white-light illumination; Absorption; Lighting; Scanning electron microscopy; Schottky barriers; Sensitivity; Silicon; Substrates; Glancing angle deposition; microscopy; nanowires; optical properties; photodetector;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2012.2218232
  • Filename
    6298935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283329