DocumentCode :
1283353
Title :
Low (2.0 kA/cm2) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15 degrees off
Author :
Kikuchi, A. ; Kishino, Katsumi ; Kaneko, Yuya
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Volume :
27
Issue :
14
fYear :
1991
fDate :
7/4/1991 12:00:00 AM
Firstpage :
1301
Lastpage :
1303
Abstract :
Very low threshold current density operation of 630 nm wavelength range GaInP/AlInP multiquantum well (MQW) lasers grown by gas source molecular beam epitaxy has been achieved. The reduction of threshold current density Jth was obtained by use of 15 degrees off
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 629 to 630 nm; GaAs substrates; GaInP-AlInP-GaAs; MQW lasers; gas source MBE; low threshold current density operation; molecular beam epitaxy; multiquantum well;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910814
Filename :
81199
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1283353
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