DocumentCode
1283363
Title
Chemical beam epitaxy
Author
Tsang, Won T.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
4
Issue
5
fYear
1988
Firstpage
18
Lastpage
24
Abstract
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is described. It combines the beam nature of MBE and the control and use of all-vapor source as in MO-CVD. The growth kinetics of all three processes are examined, and their advantages and disadvantages are considered. The monolayer thickness control capabilities of CBE are highlighted. Device applications of CBE are discussed.<>
Keywords
chemical beam epitaxial growth; CBE; MBE; MO-CVD; all-vapor source; beam nature; chemical-beam epitaxy; device applications; growth kinetics; monolayer thickness control capabilities; Chemical processes; Chemical technology; Chemical vapor deposition; Epitaxial growth; Inductors; Molecular beam epitaxial growth; Semiconductor thin films; Substrates; Temperature; Thickness control;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.8120
Filename
8120
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