Title :
Chemical beam epitaxy
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is described. It combines the beam nature of MBE and the control and use of all-vapor source as in MO-CVD. The growth kinetics of all three processes are examined, and their advantages and disadvantages are considered. The monolayer thickness control capabilities of CBE are highlighted. Device applications of CBE are discussed.<>
Keywords :
chemical beam epitaxial growth; CBE; MBE; MO-CVD; all-vapor source; beam nature; chemical-beam epitaxy; device applications; growth kinetics; monolayer thickness control capabilities; Chemical processes; Chemical technology; Chemical vapor deposition; Epitaxial growth; Inductors; Molecular beam epitaxial growth; Semiconductor thin films; Substrates; Temperature; Thickness control;
Journal_Title :
Circuits and Devices Magazine, IEEE
