• DocumentCode
    1283370
  • Title

    New pseudomorphic N-/N+ GaAs/InGaAs/GaAs power HEMT with high breakdown voltages

  • Author

    Sonoda, Takuji ; Sakamoto, Shinji ; Kasai, Naoki ; Tsuji, Satoshi ; Yamanouchi, Masato ; Takamiya, S. ; Kashimoto, Yukitoshi

  • Author_Institution
    Kitaitami Works, Mitsubishi Electr. Corp., Hyogo, Japan
  • Volume
    27
  • Issue
    14
  • fYear
    1991
  • fDate
    7/4/1991 12:00:00 AM
  • Firstpage
    1303
  • Lastpage
    1305
  • Abstract
    A new pseudomorphic N-/N+ GaAs/InGaAs/GaAs power HEMT is described that has high breakdown voltage VB of more than 20 V and full channel current If of 460 mA/mm which allows the simultaneous improvement of maximum power handling capability, linear gain GL and power-added efficiency Nadd over GaAs FETs with the same product of doping concentration and thickness of the doped layer under the gate. The 10.5 mm wide device delivered a record maximum output power of 4.7 W from a single HEMT chip with GL of 8 dB and Nadd of 25% at 14.25 GHz.
  • Keywords
    III-V semiconductors; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 10.5 mm; 14.25 GHz; 20 V; 25 percent; 4.7 W; 460 mA; GaAs-InGaAs-GaAs; high breakdown voltages; linear gain; microwave power device; power HEMT; power handling capability; power-added efficiency; pseudomorphic n -/n + device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910815
  • Filename
    81200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283370