Title :
25 GHz ft/27 GHz fmax pnp transistors for C-bipolar technology
Author :
Ratanaphanyarat, S. ; Kunag, J.B. ; Chu, S.F. ; Rausch, W. ; Saccamanga, M.J. ; Smadi, M.
Author_Institution :
IBM Gen. Technol. Div., Hopewell Junction, NY, USA
fDate :
7/4/1991 12:00:00 AM
Abstract :
A high current gain, high-speed pnp transistor technology was developed using a self-aligned doubly-poly structure. The device design and processing are compatible with and can be used in complementary bipolar circuit fabrication.
Keywords :
VLSI; bipolar integrated circuits; bipolar transistors; integrated circuit technology; semiconductor technology; 25 to 27 GHz; C-bipolar technology; VLSI; complementary bipolar circuit fabrication; complementary bipolar technology; current gain; device design; high-speed pnp transistor technology; processing; self-aligned doubly-poly structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910768
