Title :
Blue-chirp electroabsorption modulators with very thick quantum wells
Author :
Wakita, K. ; Yoshino, K. ; Kotaka, I. ; Kondo, S. ; Noguchi, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
Electroabsorption modulators operating at a wavelength of 1.55 μm with very thick quantum wells of 19.6 mm were fabricated using InGaAlAs-InAlAs multiple quantum wells. Blue-chirp (/spl alpha/<0) operation for low applied bias was demonstrated with low insertion loss.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical fabrication; optical losses; semiconductor quantum wells; 1.55 mum; 19.6 nm; InGaAlAs-InAlAs; InGaAlAs-InAlAs multiple quantum wells; blue-chirp electroabsorption modulators; low applied bias; low insertion loss; very thick quantum wells; Chirp modulation; Excitons; Insertion loss; Optical fiber polarization; Optical fibers; Optical modulation; Quantum well devices; Tellurium; Voltage; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
