An interdigitated stacked p-i-n multiple-quantum-well modulator

We demonstrate low-voltage operation of a strained InGaAs-GaAs interdigitated hetero n-i-p-i modulator (or stacked SEED) that is grown and fabricated using a shadow-mask growth technique for making the metal contacts to the n- and p-layers separately. An absorption change of 6/spl times/10/sup 3/ cm/sup -1/ with an applied bias as low as /spl sim/1 V is observed in an unoptimized structure. Optical switching of the unbiased structure is also demonstrated.