An interdigitated stacked p-i-n multiple-quantum-well modulator

Author

Huang, X.R. ; Cheung, S.K. ; Cartwright, A.N. ; Smirl, Arthur L. ; Tseng, W.F.

Author_Institution

Lab. for Photonics & Quantum Electron., Iowa Univ., Iowa City, IA, USA

Volume

8

Issue

9

fYear

1996

Firstpage

1172

Lastpage

1174

Abstract

We demonstrate low-voltage operation of a strained InGaAs-GaAs interdigitated hetero n-i-p-i modulator (or stacked SEED) that is grown and fabricated using a shadow-mask growth technique for making the metal contacts to the n- and p-layers separately. An absorption change of 6/spl times/10/sup 3/ cm/sup -1/ with an applied bias as low as /spl sim/1 V is observed in an unoptimized structure. Optical switching of the unbiased structure is also demonstrated.

Keywords

III-V semiconductors; electro-optical modulation; electro-optical switches; epitaxial growth; gallium arsenide; indium compounds; optical fabrication; semiconductor growth; semiconductor quantum wells; 1 V; InGaAs-GaAs; absorption change; applied bias; interdigitated stacked p-i-n multiple-quantum-well modulator; low-voltage operation; metal contacts; optical switching; shadow-mask growth technique; stacked SEED; strained InGaAs-GaAs interdigitated hetero n-i-p-i modulator; unbiased structure; unoptimized structure; Absorption; CMOS technology; Communication switching; Electrooptic modulators; Excitons; Gallium arsenide; Molecular beam epitaxial growth; Optical modulation; PIN photodiodes; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.531826

Filename

531826