• DocumentCode
    1283482
  • Title

    GaAs/AlGaAs dynamic random access memory cell

  • Author

    Chen, C.L. ; Goodhue, W.D. ; Mahoney, L.J.

  • Author_Institution
    Lincoln Lab., MIT, Lexington, MA, USA
  • Volume
    27
  • Issue
    15
  • fYear
    1991
  • fDate
    7/18/1991 12:00:00 AM
  • Firstpage
    1330
  • Lastpage
    1332
  • Abstract
    A single-transistor dynamic random access memory circuit using a GaAs/AlGaAs structure as the storage cell and modulation-doped field-effect transistors for memory accessing and output sensing has been developed. The functionality of the memory is demonstrated and a storage time of 5.4s is measured at room temperature.
  • Keywords
    DRAM chips; III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; 5.4 s; DRAM; GaAs-AlGaAs; MODFET; dynamic random access memory; memory accessing; modulation-doped field-effect transistors; output sensing; single transistor memory cell; storage time;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910837
  • Filename
    81222
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283482