Title :
Single-port laser-amplifier modulators for local access
Author :
Feuer, M.D. ; Wiesenfeld, J.M. ; Perino, J.S. ; Burrus, C.A. ; Raybon, G. ; Shunk, S.C. ; Dutta, N.K.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
We describe a single-port, reflective, waveguide modulator based on semiconductor laser amplifier technology. The single-port geometry reduces the high packaging cost associated with two-port waveguide modulators, while the internal gain of the amplifier compensates for splitting and coupling losses. A modulator with a bulk active layer showed a reflection-mode chip gain of 17 dB at /spl lambda/=1.56 μm. When driven with pseudorandom digital data at 100 Mb/s, extinction ratios of >12 dB were observed over the broad wavelength range (20 nm) needed for wavelength division multiplexed systems. Bit-error-rate tests confirmed that there was no distortion penalty, compared to a LiNbO3 reference modulator.
Keywords :
electro-optical modulation; integrated optics; optical communication equipment; optical losses; semiconductor lasers; wavelength division multiplexing; 1.56 mum; 100 Mbit/s; 17 dB; bit-error-rate tests; broad wavelength range; bulk active layer; coupling losses; distortion penalty; extinction ratios; high packaging cost; internal gain; local access; pseudorandom digital data; reference modulator; reflection-mode chip gain; semiconductor laser amplifier technology; single-port geometry; single-port laser-amplifier modulators; single-port reflective waveguide modulator; splitting losses; two-port waveguide modulators; wavelength division multiplexed systems; Costs; Extinction ratio; Gain; Geometrical optics; Semiconductor device packaging; Semiconductor lasers; Semiconductor optical amplifiers; Semiconductor waveguides; Waveguide lasers; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
