Title :
Application ofNicollian-Reisman model to negative point-to-plane corona oxidation of silicon
Author :
Madani, M.R. ; Ajmera, P.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
fDate :
7/18/1991 12:00:00 AM
Abstract :
The expression for silicon oxide growth proposed by Nicollian and Reisman for thermal oxidation is applied to corona discharge oxidation. The model parameter values indicate that at a given temperature the latter is more reaction rate controlled than thermal oxidation. The higher oxidation growth rate for the corona discharge oxidation is attributed to relaxation of the oxide network.
Keywords :
coating techniques; corona; elemental semiconductors; insulating thin films; modelling; oxidation; silicon; silicon compounds; Nicollian-Reisman model; Si; SiO 2 growth; corona discharge oxidation; model parameter values; negative point-to-plane oxidation; oxide network relaxation; reaction rate controlled; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910851
