Title :
Novel approach for simple fabrication of high-performance InP-switch matrix based on laser-amplifier gates
Author :
Dorgeuille, F. ; Mersali, B. ; Feuillade, M. ; Sainson, S. ; Slempkès, S. ; Foucher, M.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
We report here on an InP-switch matrix based on laser-amplifier gates with gain- and polarization-insensitive (as low as 1 dB) operation. A novel integration scheme is demonstrated that provides over 10 dB net chip gain for both input polarizations. Fiber-to-fiber operation with gain can moreover be obtained. Design and switching characteristics are detailed.
Keywords :
III-V semiconductors; electro-optical switches; indium compounds; light polarisation; optical communication equipment; optical design techniques; semiconductor lasers; semiconductor switches; 10 dB; InP; fiber-to-fiber operation; gain-insensitive; high-performance InP-switch matrix; input polarizations; integration scheme; laser-amplifier gates; net chip gain; polarization-insensitive; Optical amplifiers; Optical attenuators; Optical device fabrication; Optical fiber polarization; Optical polarization; Optical switches; Optical waveguides; Stimulated emission; Telecommunication switching; Transmission line matrix methods;
Journal_Title :
Photonics Technology Letters, IEEE
