DocumentCode :
1283606
Title :
Measurement of negative differential conductance to 40 GHz for vertically integrated resonant tunnelling diodes
Author :
Mounaix, Patrick ; Bedu, P. ; Lippens, Didier
Author_Institution :
Univ. des Sci. et Techniques de lille Flandres Artois, Villeneuve d´Ascq, France
Volume :
27
Issue :
15
fYear :
1991
fDate :
7/18/1991 12:00:00 AM
Firstpage :
1358
Lastpage :
1360
Abstract :
For the first time a direct measurement of the negative differential resistance of resonant tunnelling diodes to 40 GHz is described. To attain such a high frequency, high current double barrier heterostructures were vertically integrated so that very small area samples with low-parasitic elements can be implemented.
Keywords :
electrical conductivity measurement; microwave measurement; resonant tunnelling devices; semiconductor device testing; solid-state microwave devices; tunnel diodes; 40 GHz; EHF; RTD; direct measurement; double barrier heterostructures; high current structures; low-parasitic elements; negative differential conductance; resonant tunnelling diodes; small area samples; vertically integrated;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910855
Filename :
81240
Link To Document :
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