DocumentCode :
1283625
Title :
MOW amplifier optical bistability
Author :
Adams, M.J.
Volume :
27
Issue :
15
fYear :
1991
fDate :
7/18/1991 12:00:00 AM
Firstpage :
1363
Lastpage :
1365
Abstract :
The authors have reported the first demonstration, to their knowledge, of optical bistability in an InGaAs-InGaAsP MOW laser amplifier. By comparison with bulk InGaAsP devices, the bistability occurs at somewhat higher input powers and greater detuning, the high-frequency rolloff for the present device is comparable with that for bulk amplifiers, but this is thought to be associated with the specific structure used and not a limiting feature of MQW amplifiers in general. Comparison of experiment and theory shows good agreement for the frequency-dependence of hysteresis.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical bistability; semiconductor junction lasers; InGaAs-InGaAsP; MOW laser amplifier; frequency-dependence; hysteresis; optical bistability; semiconductor lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910858
Filename :
81243
Link To Document :
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