DocumentCode
1283649
Title
Low threshold current lateral injection lasers on semi-insulating substrates fabricated using Si impurity-induced disordering
Author
Hummel, S. ; Chen, Qian ; Osinski, J.S. ; Dapkus, P.D.
Volume
27
Issue
15
fYear
1991
fDate
7/18/1991 12:00:00 AM
Firstpage
1372
Lastpage
1374
Abstract
The results of a laser design that uses dual Si impurity-induced disordering stripes to both bury the active region and provide lateral electron injection are reported. Without heatsinking, lasers have room temperature CW threshold current as low as 2.77 mA and a single facet external quantum efficiency as high as 30%.
Keywords
integrated optoelectronics; semiconductor junction lasers; 2.77 mA; 30 percent; CW threshold current; GaAs-AlGaAs; Si impurity-induced disordering; buried active region; dual Si stripes; laser design; lateral electron injection; lateral injection lasers; low threshold current; room temperature; semi-insulating substrates; semiconductor lasers; single facet external quantum efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910863
Filename
81248
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