Title :
Uniform 64*1 arrays of individually-addressed vertical cavity top surface emitting lasers
Author :
Morgan, R.A. ; Chirovsky, L.M.F. ; Focht, M.W. ; Guth, G.D. ; Leibenguth, R.E. ; Glogovsky, K.G. ; Przybylek, G.J. ; Smith, L.E.
Author_Institution :
AT&T Bell Labs., Solid-State Technol. Center, Breinigsville, PA, USA
Abstract :
Batch-processed, totally planar, vertical-cavity top surface emitting GaAs/AlGaAs laser arrays are reported. Arrays having 64*1 elements are characterised and shown to have uniform room-temperature continuous-wave operating characteristics for threshold current approximately=2.1+or-0.1 mA, wavelength approximately=849.4+or-0.8 nm, and output power approximately=0.5+or-0.1 mW.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor laser arrays; 0.5 mW; 2.1 mA; 64*1 arrays; 64*1 elements; 849.4 nm; CW operation; GaAs-AlGaAs; characterisation; individually-addressed; laser arrays; output power; room-temperature continuous-wave operating characteristics; semiconductors; threshold current; totally planar; uniform arrays; vertical cavity top surface emitting lasers; wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910879
