Title :
Lateral variance of implanted ions
Author :
Ashworth, D.G. ; Oven, R. ; Bowyer, M.D.J.
Author_Institution :
Electron. Eng. Labs., Kent Univ., Canterbury, UK
Abstract :
A quadratic model is presented whereby the depth-dependent lateral variance of ions implanted into amorphous targets may be estimated from a knowledge of the first seven moments of the distribution. The authors compare their results, and those derived using a perturbation approach of Lorenz et al., (1989) against high resolution Monte-Carlo data.
Keywords :
Monte Carlo methods; amorphous semiconductors; ion implantation; modelling; amorphous targets; depth-dependent lateral variance; high resolution Monte-Carlo data; implanted ions; lateral spreading; quadratic model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910880
