Title :
Low threshold 1.5 mu m tensile-strained single quantum well lasers
Author :
Zah, C.E. ; Bhat, Ritesh ; Pathak, Bimalendu ; Caneau, Catherine ; Favire, F.J. ; Andreadakis, N.C. ; Hwang, D.M. ; Koza, M.A. ; Chen, C.Y. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The authors have experimentally found that the threshold current density of 1.5 mu m tensile-strained single quantum well lasers decreases with increased tensile strain. A threshold current density as low as of 197 A/cm2 is obtained with an In0.3Ga0.7As well. With semi-insulating current blocking layers and high reflection facet coatings, a threshold current as low as 2 mA is obtained from 150 mu m long lasers and a maximum CW operation temperature of 135 degrees C is achieved from 1 mm long lasers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; 1000 micron; 135 C; 150 micron; 2 mA; CW operation temperature; In 0.3Ga 0.7As well; high reflection facet coatings; long lasers; low threshold; semi-insulating current blocking layers; semiconductors; tensile-strained single quantum well lasers; threshold current; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910887
