• DocumentCode
    1283835
  • Title

    Frequency dependence of admittance of distributed surface states in MOS structures

  • Author

    Dhariwal, S.R. ; Deoraj, B.M.

  • Author_Institution
    Dept. of Phys., Jodhpur Univ., India
  • Volume
    26
  • Issue
    25
  • fYear
    1990
  • Firstpage
    2110
  • Lastpage
    2112
  • Abstract
    A new interpretation for frequency response of capacitance and conductance due to the surface states of an MOS structure has been obtained. Contrary to the usual assumption that such measurements reveal surface states around the Fermi energy Efn it has been shown that frequency response of capacitive reactance peaks around an energy Em=Efn+(kT/2) ln (1+ omega 2 tau m2) whereas the response function for conductance is constant between energies Efn and Em.
  • Keywords
    metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; semiconductor device models; Fermi energy; MOS structures; distributed surface states; frequency response of admittance; frequency response of capacitance; frequency response of conductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901358
  • Filename
    59626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283835