Title :
Improvement of aluminum-Si contact performance in native-oxide-free processing
Author :
Miyawaki, M. ; Yoshitake, S. ; Ohmi, Tadahiro
Author_Institution :
Dept. of Electron., Tohoku Univ., Sendai, Japan
Abstract :
The improvement of Al-to-Si contact performance to a low contact resistance of 0.4 mu Omega -cm/sup 2/ and a Schottky junction having an n factor of 1.02 without any thermal treatment has been achieved by a native-oxide-free processing technique. The technique consists of N/sub 2/-gas-sealed wet cleaning using pure water with low dissolved oxygen (20 p.p.b.), wafer transport and loading in an N/sub 2/ environment, and Al deposition by low-energy ion bombardment.<>
Keywords :
Schottky effect; aluminium; contact resistance; elemental semiconductors; metallisation; semiconductor technology; semiconductor-metal boundaries; silicon; surface treatment; Al-Si; N/sub 2/; N/sub 2/-gas-sealed wet cleaning; Schottky junction; contact performance; low contact resistance; low-energy ion bombardment; native-oxide-free processing; thermal treatment; wafer transport; Contact resistance; Fluctuations; Hafnium; Silicon; Sputtering; Surface cleaning; Surface resistance; Thermal factors; Thermal loading; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
