0.23 mu m gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE

Author

Tong, M. ; Ketterson, A. ; Nummila, K. ; Adesida, I. ; Aina, L. ; Mattingly, M.

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana-Champaign, IL, USA

Volume

27

Issue

16

fYear

1991

Firstpage

1426

Lastpage

1427

Abstract

Modulation-doped field effect transistors (MODFETs) with 0.23 mu m gate lengths have been fabricated on an InAlAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800 mS/mm, and unity current gain cutoff frequency f_t of over 120 GHz at room temperature have been achieved. These g_m and f_t values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; solid-state microwave devices; vapour phase epitaxial growth; 0.23 micron; 120 GHz; DC transconductance; HEMT; InAlAs-InGaAs-InP; MODFETs; MOVPE; heterostructure; metal organic vapour phase epitaxy; room temperature; semiconductors; submicron; unity current gain cutoff frequency;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910894

Filename

81282