Title :
Novel properties of a 0.1- mu m-long split-gate MODFET
Author :
Ismail, K. ; Lee, K.Y. ; Kern, D.P. ; Hong, J.M.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A MODFET with two 30-nm-long gates (separated by 40 nm) has been fabricated using ultrahigh-resolution electron-beam lithography. The proximity of the two gate fingers along with the ability to independently bias them results in the following features: (a) tunability of the threshold voltage, (b) enhancement of the transconductance, especially at low current levels, (c) reduction in short-channel effects, and (d) high-voltage gain and cutoff frequency.<>
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; 0.1 micron; 30 nm; GaAs-AlGaAs; cutoff frequency; gate fingers; high-voltage gain; short-channel effects; split-gate MODFET; threshold voltage; transconductance; tunability; ultrahigh-resolution electron-beam lithography; Charge carrier density; Electrical resistance measurement; FETs; Gallium arsenide; Gold; HEMTs; MODFETs; Split gate flash memory cells; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
