Title :
Low voltage strained layer asymmetric Fabry-Perot reflection modulator
Author :
Woodhead, J. ; Claxton, P.A. ; Grey, R. ; Sale, T.E. ; David, J.P.R. ; Liu, L. ; Pate, M.A. ; Hill, G. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
Asymmetric Fabry-Perot reflection modulators based on strained InGaAs/GaAs multiple quantum wells are described. These devices give 2.8 dB of contrast at very low applied voltages (4 V) with an insertion loss of 4.4 dB.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; infrared spectra of inorganic solids; integrated optics; optical modulation; optical resonators; reflectivity; semiconductor quantum wells; 0 to 4 V; 4.4 dB; 850 to 1050 nm; asymmetric Fabry-Perot reflection modulator; cavity resonance; insertion loss; low applied voltages; reflection spectra; strained InGaAs-GaAs multiple quantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901362
