• DocumentCode
    1283891
  • Title

    Low voltage strained layer asymmetric Fabry-Perot reflection modulator

  • Author

    Woodhead, J. ; Claxton, P.A. ; Grey, R. ; Sale, T.E. ; David, J.P.R. ; Liu, L. ; Pate, M.A. ; Hill, G. ; Robson, P.N.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    26
  • Issue
    25
  • fYear
    1990
  • Firstpage
    2117
  • Lastpage
    2118
  • Abstract
    Asymmetric Fabry-Perot reflection modulators based on strained InGaAs/GaAs multiple quantum wells are described. These devices give 2.8 dB of contrast at very low applied voltages (4 V) with an insertion loss of 4.4 dB.
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; infrared spectra of inorganic solids; integrated optics; optical modulation; optical resonators; reflectivity; semiconductor quantum wells; 0 to 4 V; 4.4 dB; 850 to 1050 nm; asymmetric Fabry-Perot reflection modulator; cavity resonance; insertion loss; low applied voltages; reflection spectra; strained InGaAs-GaAs multiple quantum wells;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901362
  • Filename
    59630
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283891