• DocumentCode
    1283905
  • Title

    Calculation of lateral distribution of interface traps along MIS channel

  • Author

    Henning, A.K. ; Dimauro, J.A.

  • Author_Institution
    Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
  • Volume
    27
  • Issue
    16
  • fYear
    1991
  • Firstpage
    1445
  • Lastpage
    1447
  • Abstract
    The lateral distribution of interface traps, averaged over the semiconductor band gap, is calculated in an MIS structure. The calculation is based on the well known charge-pumping technique. The calculation has been applied to p-channel MOSFETs.
  • Keywords
    electron traps; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor structures; semiconductor device models; MIS channel; MIS structure; charge-pumping technique; lateral distribution of interface traps; p-channel MOSFETs; semiconductor band gap;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910906
  • Filename
    81293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1283905