Reconciliation of a hot-electron distribution function with the lucky electron-exponential model in silicon

Author

Goldsman, Neil ; Henrickson, Lindor ; Frey, Jeffrey

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

11

Issue

10

fYear

1990

Firstpage

472

Lastpage

474

Abstract

The lucky-electron-exponential model (LE-EM) has been used with some success to model hot-electron-induced degradation. Examination of the LE-EM shows its exponential form is an approximation to the high-energy tails of Monte-Carlo-generated hot-electron distribution functions (HEDFs). It is also suggested that the proper LE-EM mean-free path lambda for use in calculating MOSFET gate leakage current is approximately 50 AA, while the commonly used value of 78 AA is appropriate for modeling phenomena related to impact ionization.<>

Keywords

Monte Carlo methods; hot carriers; impact ionisation; insulated gate field effect transistors; leakage currents; semiconductor device models; MOSFET gate leakage current; Monte-Carlo-generated hot-electron distribution functions; hot-electron-induced degradation; impact ionization; lucky electron-exponential model; Acoustic scattering; Degradation; Distribution functions; Electrons; Impact ionization; Light scattering; MOSFET circuits; Phonons; Probability distribution; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63000

Filename

63000