Title :
Reconciliation of a hot-electron distribution function with the lucky electron-exponential model in silicon
Author :
Goldsman, Neil ; Henrickson, Lindor ; Frey, Jeffrey
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
The lucky-electron-exponential model (LE-EM) has been used with some success to model hot-electron-induced degradation. Examination of the LE-EM shows its exponential form is an approximation to the high-energy tails of Monte-Carlo-generated hot-electron distribution functions (HEDFs). It is also suggested that the proper LE-EM mean-free path lambda for use in calculating MOSFET gate leakage current is approximately 50 AA, while the commonly used value of 78 AA is appropriate for modeling phenomena related to impact ionization.<>
Keywords :
Monte Carlo methods; hot carriers; impact ionisation; insulated gate field effect transistors; leakage currents; semiconductor device models; MOSFET gate leakage current; Monte-Carlo-generated hot-electron distribution functions; hot-electron-induced degradation; impact ionization; lucky electron-exponential model; Acoustic scattering; Degradation; Distribution functions; Electrons; Impact ionization; Light scattering; MOSFET circuits; Phonons; Probability distribution; Silicon;
Journal_Title :
Electron Device Letters, IEEE
