50-GHz self-aligned silicon bipolar transistors with ion-implanted base profiles

Author

Warnock, James ; Cressler, John D. ; Jenkins, Keith A. ; Chen, Tze-Chiang ; Sun, Jack Y C ; Tang, Denny D.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

11

Issue

10

fYear

1990

Firstpage

475

Lastpage

477

Abstract

Silicon bipolar transistors having cutoff frequencies from 40 to 50 GHz have been fabricated in a double -polysilicon self-aligned structure using a process which relies on ion implantation for the intrinsic base formation. The devices have nearly ideal DC characteristics, with breakdown voltages adequate for most digital applications. The results demonstrate that the performance limits of conventional implanted technologies are significantly higher than previously thought.<>

Keywords

elemental semiconductors; heterojunction bipolar transistors; ion implantation; semiconductor technology; silicon; solid-state microwave devices; 40 to 50 GHz; DC characteristics; Si:B; Si:B-Si:As; bipolar transistors; breakdown voltages; cut off frequency; cutoff frequencies; digital applications; double -polysilicon self-aligned structure; intrinsic base formation; ion implantation; ion-implanted base profiles; Acceleration; Bipolar transistors; Boron; Cutoff frequency; Diffusion processes; Doping; Implants; Ion implantation; Silicon; Thermal resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63001

Filename

63001