DocumentCode
1283933
Title
Demonstration of high performance heterojunction field effect transistor in InAlAs/InGaAs/InAlGaAs/InP material system
Author
Mand, R.S. ; Simmons, Jay G.
Author_Institution
Furukana Electr. Technol. Inc., Santa Clara, CA, USA
Volume
27
Issue
16
fYear
1991
Firstpage
1453
Lastpage
1454
Abstract
The heterojunction field effect transistor (HFET) is demonstrated for the first time in InAlAs/InGaAs/InAlGaAs/InP material system using molecular beam epitaxy (MBE). A tungsten gate selfaligned HFET structure was made by ion imitation and rapid thermal annealing. The 1.0 mu m self-aligned gate HFET exhibited room temperature transconductance of 490 mS/mm with cutoff frequency of 9 GHz.
Keywords
III-V semiconductors; aluminium compounds; annealing; field effect transistors; gallium arsenide; indium compounds; ion implantation; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; 1 micron; 9 GHz; HFET; InAlAs-InGaAs-InAlGaAs-InP; InP substrate; MBE; W gate; cutoff frequency; heterojunction field effect transistor; ion imitation; lattice matching; molecular beam epitaxy; n-channel; rapid thermal annealing; room temperature transconductance; self-aligned gate HFET; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910910
Filename
81297
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