Title :
A narrow-channel, 0.2- mu m gate-length, double-quantum-well pseudomorphic MODFET with high power gain at millimeter-wave frequencies
Author :
Metze, George M. ; Lee, Timothy T. ; Bass, J.F. ; Laux, P.L. ; Carlson, H.C. ; Cornfeld, A.B.
Author_Institution :
Comsat Lab., Clarksburg, MD, USA
Abstract :
State-of-the-art pseudomorphic MODFETs were developed with metallurgical gate lengths between 0.22 and 0.25 mu m, very short source-to-drain spacings of 0.7 mu m, and a double-quantum-well material structure. S-parameter measurements were performed on these 60- mu m gate-width devices up to 40 GHz. From these S-parameter measurements, an extrapolated value of 82 GHz was estimated for F/sub t/. Modeling of the power gain as a function of frequency indicates that F/sub max/ may be as high as 305 GHz.<>
Keywords :
S-parameters; high electron mobility transistors; semiconductor quantum wells; solid-state microwave devices; 0.2 micron; 0.22 to 0.25 micron; 0.7 micron; 305 GHz; 40 GHz; 60 micron; 82 GHz; MM-wave frequencies; S-parameter measurements; double-quantum-well pseudomorphic MODFET; gate-width; high power gain; metallurgical gate lengths; narrow-channel; power gain; short source-to-drain spacings; Frequency estimation; Gallium arsenide; Geometry; HEMTs; Inorganic materials; MMICs; MODFETs; Millimeter wave technology; Performance evaluation; Scattering parameters;
Journal_Title :
Electron Device Letters, IEEE
