Title :
Sidegating effect of GaAs MESFETs and leakage current in a semi-insulating GaAs substrate
Author :
Liu, Yi ; Dutton, Robert W. ; Deal, Michael D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
A series of measurements were made on test structures to study the sidegating effect of GaAs MESFETs. The results show that the small portion of the gate of a MESFET that is in direct contact with the semi-insulating substrate plays an important role in causing the observed rapid rise of leakage current and in enhancing the sidegating effect.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; leakage currents; semiconductor device testing; GaAs; MESFET measurements; MESFET test structures; leakage current; semi-insulating GaAs substrate; sidegating effect; Annealing; Circuit testing; Current measurement; Electrodes; Gallium arsenide; Gold; Leakage current; MESFETs; Ohmic contacts; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
