MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/

Author

Lo, G.Q. ; Ting, W. ; Kwong, Dim-Lee ; Kuehne, John ; Magee, Charles W.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

11

Issue

11

fYear

1990

Firstpage

511

Lastpage

513

Abstract

Rapid thermal processing (RTP) was applied to the fabrication of the ultrathin ( approximately 10 nm) high-quality fluorinated oxides in O/sub 2/+NF/sub 3/. NF/sub 3/ (diluted in N/sub 2/) was used as the F source gas and was introduced either prior to rapid thermal oxidation (RTO) or with O/sub 2/ during the initial stage of RTO. The electrical characteristics of MOS capacitors have been studied and correlated with the chemical properties. It was found that SiO/sub 2/ with a small amount of F incorporated shows reduced interface state generation under F-N injection, whereas excessive F incorporation is detrimental.<>

Keywords

capacitors; dielectric thin films; fluorine; insulated gate field effect transistors; metal-insulator-semiconductor devices; oxidation; semiconductor technology; silicon compounds; 10 nm; F-N injection; MOS capacitors; MOS characteristics; O/sub 2/-NF/sub 3/-N/sub 2/; RTO; RTP; SiO/sub 2/:F-Si; chemical properties; electrical characteristics; fluorinated gate dielectrics; rapid thermal oxidation; rapid thermal processing; reduced interface state generation; ultrathin gate oxides; Chemicals; Dielectrics; Electric variables; Hafnium; Interface states; Ion implantation; MOS capacitors; Noise measurement; Oxidation; Rapid thermal processing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63016

Filename

63016