Title :
Modelling of thin-film HTS/ferroelectric interdigital capacitors
Author :
Gevorgian, S. ; Carlsson, E. ; Rudner, S. ; Wernlund, L.-D. ; Wang, X. ; Helmersson, U.
Author_Institution :
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
10/1/1996 12:00:00 AM
Abstract :
The model of the interdigital capacitor (IDC) has been used for monitoring and analysing the dielectric properties of thin ferroelectric films. The dielectric properties of the film are correlated to its crystalline structure using a simple model of STO. The results of the analysis may be used for optimisation of growth and annealing processes of the films and reducing the effects of the electrode ferroelectric interface. The model can be used to optimise the design of IDCs in the sense of minimum losses and maximum controllability by selecting finger width and gapwidth of the IDC. Further improvement of the model suggests a comprehensive study of all possible mechanisms affecting the dielectric constant and the losses of STO films
Keywords :
ferroelectric capacitors; ferroelectric materials; ferroelectric thin films; high-temperature superconductors; permittivity; strontium compounds; superconducting microwave devices; thin film capacitors; IDC; STO films; SrTiO3; annealing; crystalline structure; design; dielectric constant; dielectric properties; electrode ferroelectric interface; finger width; gapwidth; growth; losses; thin ferroelectric films; thin-film HTS/ferroelectric interdigital capacitors;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings
DOI :
10.1049/ip-map:19960595
