Title :
Linear compound FET circuit using gallium arsenide MESFETs
Author :
Haigh, D.G. ; Toumazou, C.
Author_Institution :
Univ. Coll., London, UK
Abstract :
A design for a compound FET using depletion-mode gallium arsenide MESFETs and diodes is presented. The compound FET exhibits a linearised relationship between the drain and source currents and the applied gate-source voltage. Simulations confirm good linearity and frequency characteristics for the compound FET to 10 GHz.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; solid-state microwave circuits; 10 GHz; MESFETs; SHF; depletion-mode; diodes; frequency characteristics; linear compound FET circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910935
