• DocumentCode
    1284090
  • Title

    Linear compound FET circuit using gallium arsenide MESFETs

  • Author

    Haigh, D.G. ; Toumazou, C.

  • Author_Institution
    Univ. Coll., London, UK
  • Volume
    27
  • Issue
    16
  • fYear
    1991
  • Firstpage
    1494
  • Lastpage
    1496
  • Abstract
    A design for a compound FET using depletion-mode gallium arsenide MESFETs and diodes is presented. The compound FET exhibits a linearised relationship between the drain and source currents and the applied gate-source voltage. Simulations confirm good linearity and frequency characteristics for the compound FET to 10 GHz.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect transistor circuits; gallium arsenide; solid-state microwave circuits; 10 GHz; MESFETs; SHF; depletion-mode; diodes; frequency characteristics; linear compound FET circuit;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910935
  • Filename
    81321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1284090