DocumentCode :
1284156
Title :
Analysis of injection-locked gain-guided diode laser arrays
Author :
Verdiell, Jean-Marc ; Frey, Robert ; Huignard, Jean-Pierre
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Volume :
27
Issue :
3
fYear :
1991
fDate :
3/1/1991 12:00:00 AM
Firstpage :
396
Lastpage :
401
Abstract :
A new model for injection-locked gain guided laser arrays is proposed. Diffraction-limited and single-lobe operation of injection-locked arrays is attributed to coherent summation of several transverse modes that are phase locked by injection. The model predicts far-field and near-field patterns, locking bandwidth, beam-steering properties, and locked output power. The effects of varying the master power, beam shape, position, and incidence angle on the slave array facet are also studied. Theoretical and experimental results are compared
Keywords :
laser modes; semiconductor laser arrays; beam position; beam shape; beam-steering properties; coherent summation; diffraction limited operation; far field patterns; incidence angle; injection-locked gain-guided diode laser arrays; locked output power; locking bandwidth; master power; near-field patterns; single-lobe operation; slave array facet; transverse modes; Bandwidth; Diffraction; Diode lasers; Laser mode locking; Master-slave; Optical arrays; Phased arrays; Power generation; Predictive models; Semiconductor laser arrays;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.81337
Filename :
81337
Link To Document :
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