• DocumentCode
    1284194
  • Title

    Design, Performance, and Energy Consumption of eDRAM/SRAM Macrocells for L1 Data Caches

  • Author

    Valero, Alejandro ; Petit, Salvador ; Sahuquillo, Julio ; Lopez, Pierre ; Duato, José

  • Author_Institution
    Dept. of Comput. Eng. (DISCA), Univ. Politec. de Valencia, Valencia, Spain
  • Volume
    61
  • Issue
    9
  • fYear
    2012
  • Firstpage
    1231
  • Lastpage
    1242
  • Abstract
    SRAM and DRAM have been the predominant technologies used to implement memory cells in computer systems, each one having its advantages and shortcomings. SRAM cells are faster and require no refresh since reads are not destructive. In contrast, DRAM cells provide higher density and minimal leakage energy since there are no paths within the cell from Vdd to ground. Recently, DRAM cells have been embedded in logic-based technology (eDRAM), thus overcoming the speed limit of typical DRAM cells. In this paper, we propose a hybrid n-bit macrocell that implements one SRAM cell and n-1 eDRAM cells. This cell is aimed at being used in an n-way set-associative first-level data cache. Architectural mechanisms (e.g., special writeback policies) have been devised to completely avoid refresh logic. Performance, energy, and area have been analyzed in detail. Experimental results show that using typical eDRAM capacitors, and compared to a conventional cache, a 4-way set-associative hybrid cache reduces both energy consumption and area up to 54 and 29 percent, respectively, while having negligible impact on performance (less than 2 percent).
  • Keywords
    DRAM chips; SRAM chips; cache storage; data handling; performance evaluation; power aware computing; L1 data caches; SRAM macrocells; architectural mechanisms; computer systems; design consumption; eDRAM macrocells; embedded in logic based technology; energy consumption; hybrid n-bit macrocell; memory cells; performance consumption; Arrays; Capacitors; Macrocell networks; Program processors; Radiation detectors; Random access memory; Transistors; Retention time; static and dynamic energy; static and dynamic memory cells; way prediction.;
  • fLanguage
    English
  • Journal_Title
    Computers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9340
  • Type

    jour

  • DOI
    10.1109/TC.2011.138
  • Filename
    5963642