Title :
Single polarization optical waveguide on silicon
Author :
De Brabander, Gregory N. ; Boyd, Joseph T. ; Jackson, Howard E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
A single polarization optical waveguide structure is introduced and demonstrated experimentally. The optical waveguide structure considered is a silicon nitride film deposited onto an oxidized silicon wafer so as to form a single-mode planar waveguide. Single polarization is achieved by choosing layer thicknesses, so that the attenuation due to substrate coupling for the TM mode is much larger than that for the TE mode. Calculations are presented to define ranges of design parameters over which TM attenuation can be 3-4 orders of magnitude higher than that for TE. In one sample having a TE loss of 0.28 dB/cm measured at a wavelength of 0.63 μm a ratio of TM to TE attenuation of over 750 is experimentally demonstrated
Keywords :
integrated optics; light polarisation; optical losses; optical waveguide theory; substrates; 0.28 dB; 0.63 micron; Si3N4-Si; TE attenuation; TE loss; TE mode; TM attenuation; TM mode; layer thicknesses; oxidized silicon wafer; single polarization optical waveguide structure; single-mode planar waveguide; substrate coupling; Attenuation; Optical attenuators; Optical films; Optical planar waveguides; Optical polarization; Optical waveguides; Planar waveguides; Semiconductor films; Silicon; Tellurium;
Journal_Title :
Quantum Electronics, IEEE Journal of
