Single polarization optical waveguide on silicon

Author

De Brabander, Gregory N. ; Boyd, Joseph T. ; Jackson, Howard E.

Author_Institution

Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA

Volume

27

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

575

Lastpage

579

Abstract

A single polarization optical waveguide structure is introduced and demonstrated experimentally. The optical waveguide structure considered is a silicon nitride film deposited onto an oxidized silicon wafer so as to form a single-mode planar waveguide. Single polarization is achieved by choosing layer thicknesses, so that the attenuation due to substrate coupling for the TM mode is much larger than that for the TE mode. Calculations are presented to define ranges of design parameters over which TM attenuation can be 3-4 orders of magnitude higher than that for TE. In one sample having a TE loss of 0.28 dB/cm measured at a wavelength of 0.63 μm a ratio of TM to TE attenuation of over 750 is experimentally demonstrated

Keywords

integrated optics; light polarisation; optical losses; optical waveguide theory; substrates; 0.28 dB; 0.63 micron; Si₃N₄-Si; TE attenuation; TE loss; TE mode; TM attenuation; TM mode; layer thicknesses; oxidized silicon wafer; single polarization optical waveguide structure; single-mode planar waveguide; substrate coupling; Attenuation; Optical attenuators; Optical films; Optical planar waveguides; Optical polarization; Optical waveguides; Planar waveguides; Semiconductor films; Silicon; Tellurium;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.81365

Filename

81365