DocumentCode
1284359
Title
Ultra-wide-band (>40 GHz) submicron InGaAs metal-semiconductor-metal photodetectors
Author
Bottcher, E.H. ; Droge, E. ; Bimberg, D. ; Umbach, A. ; Engel, H.
Author_Institution
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Volume
8
Issue
9
fYear
1996
Firstpage
1226
Lastpage
1228
Abstract
Submicron feature size InGaAs metal-semiconductor-metal (MSM) photodetectors with 3-dB bandwidths in excess of 40 GHz are demonstrated. Devices with a 0.3-μm-thick active layer and an interelectrode spacing of <0.5 μm show a roll-off of the frequency response of /spl les/2 dB up to 40 GHz when operated at 5-V bias under front illumination with 1.3-μm light.
Keywords
III-V semiconductors; electrodes; frequency response; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; /spl mu/m light; /spl mu/m-thick active layer; 0.3 mum; 0.5 mum; 1.3 mum; 40 GHz; 5 V; InGaAs; InGaAs metal-semiconductor-metal photodetectors; MSM photodetectors; frequency response; front illumination; interelectrode spacing; roll-off; submicron feature size; ultra-wide-band; Bandwidth; Capacitance; Detectors; Electrodes; Fabrication; Indium gallium arsenide; Indium phosphide; Optical waveguides; Photodetectors; Ultra wideband technology;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.531844
Filename
531844
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