Linewidth enhancement factor and high temperature performance of 1.48 μm strained InGaAs-InGaAsP multiquantum well laser

Author

Dutta, Niloy K. ; Olsson, N. Anders ; Temkin, Henry K. ; Logan, Ralph A. ; Tanbun-Ek, T.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

27

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

678

Lastpage

680

Abstract

The linewidth enhancement factor α in strained InGaAs-InGaAsP multiquantum well (MQW) lasers emitting near 1.48 μm has been experimentally determined. The measured α at the lasing wavelength is found to be 2 compared to a value of 5.5 and 3.5 typically observed in InGaAsP-InP regular double heterostructure (DH) lasers and MQW lasers, respectively. The small α shows that single wavelength strained MQW lasers have smaller chirp width under modulation and also smaller CW linewidth. The carrier lifetime at threshold in these strained MQW lasers does not decrease as rapidly with increasing temperature as is observed for regular InGaAsP-InP DH lasers. This indicates a smaller nonradiative carrier loss due to Auger recombination in strained quantum wells

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; spectral line breadth; 1.48 micron; Auger recombination; InGaAs-InGaAsP; MQW lasers; carrier lifetime; high temperature performance; laser threshold; lasing wavelength; linewidth enhancement factor; nonradiative carrier loss; semiconductors; smaller CW linewidth; smaller chirp width; strained InGaAs-InGaAsP multiquantum well laser; Charge carrier density; Chirp; Indium gallium arsenide; Laser theory; Optical device fabrication; Quantum well devices; Quantum well lasers; Refractive index; Semiconductor lasers; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.81376

Filename

81376