DocumentCode
1284408
Title
Reduced-confinement GaAlAs tapered waveguide antennas for enhanced far-field beam directionality
Author
Bossi, Donald E. ; Goodhue, William D. ; Johnson, Leonard M. ; Rediker, Robert H.
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
Volume
27
Issue
3
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
687
Lastpage
695
Abstract
Reduced-confinement tapered waveguide antennas are shown to produce reductions of >35% in the transverse far-field beam divergence for radiation emitted from GaAlAs slab waveguides, resulting in far-field beams as narrow as 8.2 degrees full width at half-maximum (FWHM) along the direction perpendicular to the wafer surface. Reduced confinement of the guided mode near the output endface is achieved using a novel molecular-beam-epitaxy growth technique to produce a longitudinal reduction in the refractive index and thickness of the waveguide film. The reduced-confinement geometry has the distinct advantage over horn antennas of being compatible with two-dimensional antenna development. A numerical simulation is used to verify and predict the performance limitations of reduced-confinement antennas. Requirements on both the amplitude and phase profiles of the electric field at the antenna output are shown to impose a stringent lower limit on the acceptable taper length for optimal antenna performance.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; waveguide antennas; 2D antenna development; GaAlAs tapered waveguide antennas; enhanced far-field beam directionality; guided mode; molecular-beam-epitaxy growth technique; optimal antenna performance; output endface; reduced-confinement geometry; refractive index; semiconductors; slab waveguides; taper length; transverse far-field beam divergence; waveguide film thickness; Coupling circuits; Directive antennas; Horn antennas; Laboratories; Optical beams; Optical coupling; Optical films; Optical surface waves; Optical waveguides; Surface waves;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.81378
Filename
81378
Link To Document