1/f/sup alpha / noise and fabrication variations of TiW/Al VLSI interconnections

Author

Cottle, James G. ; Klonaris, N.S. ; Bordelon, Mark

Author_Institution

Dept. of Electr. Eng., South Florida Univ., Tampa, FL, USA

Volume

11

Issue

11

fYear

1990

Firstpage

523

Lastpage

525

Abstract

Noise measurements were utilized to detect differences in fabrication processes on the layered TiW/Al metallization system. A dual-channel AC bridge system was used to measure the current noise of packaged 1.8- mu m-wide thin-film interconnections fabricated by a variety of processing parameters. The quick, nondestructive noise measurements were able to discriminate relative film group reliabilities and correlated well with results obtained from more conventional median-time-to-failure (MTF) testing.<>

Keywords

VLSI; aluminium; electron device noise; life testing; metallisation; nondestructive testing; reliability; titanium compounds; 1.8 micron; 1/f/sup alpha / noise; MTTF testing; TiW-Al; TiW/Al VLSI interconnections; TiW/Al metallization; current noise; discriminate relative film group reliabilities; dual-channel AC bridge system; fabrication differences detection; fabrication variations; median-time-to-failure; nondestructive noise measurements; thin-film interconnections; Artificial intelligence; Electromigration; Fabrication; Metallization; Noise measurement; Semiconductor device noise; Semiconductor films; Temperature dependence; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63020

Filename

63020