Title :
1/f/sup alpha / noise and fabrication variations of TiW/Al VLSI interconnections
Author :
Cottle, James G. ; Klonaris, N.S. ; Bordelon, Mark
Author_Institution :
Dept. of Electr. Eng., South Florida Univ., Tampa, FL, USA
Abstract :
Noise measurements were utilized to detect differences in fabrication processes on the layered TiW/Al metallization system. A dual-channel AC bridge system was used to measure the current noise of packaged 1.8- mu m-wide thin-film interconnections fabricated by a variety of processing parameters. The quick, nondestructive noise measurements were able to discriminate relative film group reliabilities and correlated well with results obtained from more conventional median-time-to-failure (MTF) testing.<>
Keywords :
VLSI; aluminium; electron device noise; life testing; metallisation; nondestructive testing; reliability; titanium compounds; 1.8 micron; 1/f/sup alpha / noise; MTTF testing; TiW-Al; TiW/Al VLSI interconnections; TiW/Al metallization; current noise; discriminate relative film group reliabilities; dual-channel AC bridge system; fabrication differences detection; fabrication variations; median-time-to-failure; nondestructive noise measurements; thin-film interconnections; Artificial intelligence; Electromigration; Fabrication; Metallization; Noise measurement; Semiconductor device noise; Semiconductor films; Temperature dependence; Very large scale integration; Voltage;
Journal_Title :
Electron Device Letters, IEEE
