Title :
Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator
Author :
Lee, Sang Sun ; Ramaswamy, Ramu V. ; Sundaram, Veeravana S.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
A P-p-i-n-N, GaAs-AlGaAs, TE/TM mode phase modulator, which has both the high phase shift efficiency of a p-n homojunction modulator and the high speed associated with a P-i-N modulator, is considered by incorporating p- and n-GaAs buffer layers and utilizing the higher order effects in these layers. The device structure is analyzed by considering the individual contributions of both the electrooptic [linear electrooptic (LEO) and quadratic electrooptic (QEO)] effects and the free carrier [plasma (PL) and bandgap shift (BS)] effects. These effects are studied in detail as a function of the reverse bias, operating wavelength, doping concentration, and intrinsic layer thickness. The results are in excellent agreement with the theoretical predictions
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; III-V semiconductor; bandgap shift effects; device structure; doping concentration; free carrier effects; high speed high efficiency GaAs-AlGaAs double heterostructure waveguide phase modulator; higher order effects; intrinsic layer thickness; linear electrooptic effects; operating wavelength; plasma effects; quadratic electrooptic effects; reverse bias; Buffer layers; Doping; Electrooptic devices; Low earth orbit satellites; PIN photodiodes; Phase modulation; Photonic band gap; Plasma devices; Plasma waves; Tellurium;
Journal_Title :
Quantum Electronics, IEEE Journal of
