Title :
Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 μm operation
Author :
Fuji, H.S. ; Ray, Sankar ; Williams, T.J. ; Griem, H.T. ; Harrang, J.P. ; Daniels, Robert R. ; LaGasse, M.J. ; West, D.L.
Author_Institution :
Boeing Aerosp. & Electron., Seattle, WA, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
A report is presented on a fully integrated metal-semiconductor-metal (MSM) transimpedance amplifier photoreceiver based on lattice matched In0.53Ga0.47As-In0.52Al0.48 As heterostructures grown by molecular beam epitaxy (MBE). The layers were deposited in a single growth run with the heterojunction-FET (HFET) layers overlaying the detector structures and fabricated using a simple, near planar process that does not require pregrowth substrate patterning or complex planarization schemes. The 1 μm gate length HFET devices showed good pinch-off and a high ft of 30 GHz indicating that the underlying detector layers do not degrade the high-frequency HFET device performance. Clean eye patterns at 2 Gbit/s have been achieved
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; molecular beam epitaxial growth; optical communication equipment; receivers; semiconductor growth; 1.0 to 1.6 micron; 10 GHz; 2 Gbit/s; III-V semiconductors; clean eye patterns; detector structures; fully integrated metal-semiconductor-metal transimpedance amplifier photoreceiver; gate length heterojunction field effect transistor layers; lattice matched In0.53Ga0.47As-In0.52 Al0.48As heterostructures; molecular beam epitaxy; near planar process; single growth run; Circuits; HEMTs; Indium phosphide; Lattices; MODFETs; Molecular beam epitaxial growth; Operational amplifiers; Optical amplifiers; Photodetectors; Substrates;
Journal_Title :
Quantum Electronics, IEEE Journal of
