DocumentCode
1284527
Title
ISFET-Based Chemical Switch
Author
Al-Ahdal, Abdulrahman ; Toumazou, Christopher
Author_Institution
Electr. & Electron. Eng. Dept, Imperial Coll., London, UK
Volume
12
Issue
5
fYear
2012
fDate
5/1/2012 12:00:00 AM
Firstpage
1140
Lastpage
1146
Abstract
Ion sensitive field effect transistors (ISFETs) have been used as analogue continuous time chemical sensor. A single ISFET, either an N or a P device, forms the sensitive part of the circuit that may condition the signal. Each ISFET had its own ion sensitive membrane as part of it. It is shown in this work that, for devices built using a standard CMOS process, it is possible for more than one ISFET to share the same ion sensitive passivation layer. Using floating gate devices concepts, a complementary pair of ISFETs (n and p devices) shared the same ion sensitive membrane forming a fully functioning chemical switch. Its switching threshold voltage shifted by 28.33 mV per pH change of the electrolyte under test.
Keywords
CMOS integrated circuits; ion sensitive field effect transistors; semiconductor switches; CMOS process; ISFET-based chemical switch; analogue continuous time chemical sensor; electrolyte under test; ion sensitive field effect transistors-based chemical switch; ion sensitive membrane; voltage 28.33 mV; Capacitance; Chemicals; Equations; Inverters; Logic gates; Passivation; Switches; Chemical; FG-MOS; ISFET; floating gate MOS; inverter; pH; switch;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2011.2163185
Filename
5963703
Link To Document