DocumentCode :
1284527
Title :
ISFET-Based Chemical Switch
Author :
Al-Ahdal, Abdulrahman ; Toumazou, Christopher
Author_Institution :
Electr. & Electron. Eng. Dept, Imperial Coll., London, UK
Volume :
12
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
1140
Lastpage :
1146
Abstract :
Ion sensitive field effect transistors (ISFETs) have been used as analogue continuous time chemical sensor. A single ISFET, either an N or a P device, forms the sensitive part of the circuit that may condition the signal. Each ISFET had its own ion sensitive membrane as part of it. It is shown in this work that, for devices built using a standard CMOS process, it is possible for more than one ISFET to share the same ion sensitive passivation layer. Using floating gate devices concepts, a complementary pair of ISFETs (n and p devices) shared the same ion sensitive membrane forming a fully functioning chemical switch. Its switching threshold voltage shifted by 28.33 mV per pH change of the electrolyte under test.
Keywords :
CMOS integrated circuits; ion sensitive field effect transistors; semiconductor switches; CMOS process; ISFET-based chemical switch; analogue continuous time chemical sensor; electrolyte under test; ion sensitive field effect transistors-based chemical switch; ion sensitive membrane; voltage 28.33 mV; Capacitance; Chemicals; Equations; Inverters; Logic gates; Passivation; Switches; Chemical; FG-MOS; ISFET; floating gate MOS; inverter; pH; switch;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2011.2163185
Filename :
5963703
Link To Document :
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