• DocumentCode
    1284527
  • Title

    ISFET-Based Chemical Switch

  • Author

    Al-Ahdal, Abdulrahman ; Toumazou, Christopher

  • Author_Institution
    Electr. & Electron. Eng. Dept, Imperial Coll., London, UK
  • Volume
    12
  • Issue
    5
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    1140
  • Lastpage
    1146
  • Abstract
    Ion sensitive field effect transistors (ISFETs) have been used as analogue continuous time chemical sensor. A single ISFET, either an N or a P device, forms the sensitive part of the circuit that may condition the signal. Each ISFET had its own ion sensitive membrane as part of it. It is shown in this work that, for devices built using a standard CMOS process, it is possible for more than one ISFET to share the same ion sensitive passivation layer. Using floating gate devices concepts, a complementary pair of ISFETs (n and p devices) shared the same ion sensitive membrane forming a fully functioning chemical switch. Its switching threshold voltage shifted by 28.33 mV per pH change of the electrolyte under test.
  • Keywords
    CMOS integrated circuits; ion sensitive field effect transistors; semiconductor switches; CMOS process; ISFET-based chemical switch; analogue continuous time chemical sensor; electrolyte under test; ion sensitive field effect transistors-based chemical switch; ion sensitive membrane; voltage 28.33 mV; Capacitance; Chemicals; Equations; Inverters; Logic gates; Passivation; Switches; Chemical; FG-MOS; ISFET; floating gate MOS; inverter; pH; switch;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2011.2163185
  • Filename
    5963703