InAlAs/InGaAs metamorphic low-noise HEMT

Author

Kawano, M. ; Kuzuhara, T. ; Kawasaki, H. ; Sasaki, F. ; Tokuda, H.

Author_Institution

Komukai Works, Toshiba Corp., Kawasaki, Japan

Volume

7

Issue

1

fYear

1997

Firstpage

6

Lastpage

8

Abstract

An In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic low-noise high electron mobility transistor (HEMT) has been developed. A growth temperature by molecular beam epitaxy (MBE) and a thickness of a linearly graded InAlAs buffer layer have been optimized in order to reduce the density of lattice-misfit dislocation. Relatively high sheet electron density and mobility of 2.6×10/sup 12/ cm/sup -2/ and 9500 cm²/V sec at room temperature, respectively, are obtained. A 0.1-μm-gate low-noise HEMT is fabricated using the developed epitaxial wafer A minimum noise figure of 0.48 dB with an associated gain of 14.2 dB has been obtained at 18 GHz.

Keywords

III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; molecular beam epitaxial growth; semiconductor device noise; semiconductor growth; 0.1 micron; 0.48 dB; 14.2 dB; 18 GHz; GaAs; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As; MBE growth temperature optimisation; SHF; high electron mobility transistor; linearly graded InAlAs buffer layer; metamorphic low-noise HEMT; molecular beam epitaxy; sheet electron density; Buffer layers; Electron mobility; Gain; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Molecular beam epitaxial growth; Noise figure; Temperature;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.553703

Filename

553703